Submicrometer poly-Si CMOS fabrication with low-temperature laser doping

The laser doping process for submicrometer CMOS devices with leakage currents as low as 10/sup -12/ A/ mu m for both n-channel and p-channel devices is discussed. The I-V characteristics are comparable to those of poly-Si devices fabricated using ion implantation and high-temperature annealing processes. The laser-induced melting of predeposited impurity doping (LIMPID) process was used to fabricate submicrometer polycrystalline-Si CMOS devices. This process uses a very low temperature, so no dopant atom can diffuse along the grain boundaries in the solid region. The use of stacked Al/SiO/sub 2/ films as a protection layer made it possible to reduce the leakage current from several tens of picoamperes per micrometer to 1 pA/ mu m.<>