A novel x-band oscillator using substrate integrated waveguide resonators

Author

Jin Long ; Qian Kewei

Author_Institution

Res. Inst. of Electron. Technol., Univ. of Electron. Sci. Technol. of China, Chengdu, China

fYear

2014

fDate

12-15 Aug. 2014

Firstpage

1359

Lastpage

1361

Abstract

In this paper, a novel x-band oscillator using a substrate integrated waveguide (SIW) resonator has been proposed and developed for microwave applications. A high integrated X-band oscillator, which consists of a SIW resonator whose dimension is 15mm in length and 9.2mm in width, is designed. An NEC low noise GaAs JFET NE3515s02 is used as the active device. The oscillator is designed by negative resistance method based on Agilent ADS. The oscillator frequency is mainly decided by the SIW resonator. Measured results show that the oscillation frequency is 9.89GHz. The output power is 5.75 dBm and phase-noise of -117 dBc/Hz @1MHz, which is very suitable for applications of radar and communication systems.

Keywords

III-V semiconductors; gallium arsenide; junction gate field effect transistors; microwave oscillators; microwave resonators; microwave transistors; phase noise; substrate integrated waveguides; Agilent ADS; GaAs; NEC low noise JFET NE3515s02; SIW resonator; active device; communication systems; frequency 9.89 GHz; high integrated X-band oscillator; negative resistance method; oscillator frequency; phase-noise; radar; size 15 mm; size 9.2 mm; substrate integrated waveguide resonators; Microstrip; Microwave FETs; Microwave communication; Microwave oscillators; Resonant frequency; Oscillator; Resonator; SIW; X-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2014 15th International Conference on

Conference_Location

Chengdu

Type

conf

DOI

10.1109/ICEPT.2014.6922902

Filename

6922902