The vertical integration of crystalline NMOS and amorphous orientational edge detector

Author

Lin, Heng-Chih ; Sah, Wen-Jyh ; Lee, Si-Chen

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

39

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2810

Lastpage

2812

Abstract

The integration of the amorphous silicon (a-Si:H) orientational edge detector on top of the crystalline silicon metal-oxide-semiconductor (MOS) transistor has been achieved. The edge detector is an effective input device for pattern recognition in which only the skeleton of the object will be extracted, while the underlying MOSFET can amplify the response of the edge detector and perform further analysis. This integration can be viewed as a key step in combining crystalline silicon readout circuit and amorphous silicon edge detector to form three-dimensional architecture. It is a promising technique for future application in neural image sensors

Keywords

MOS integrated circuits; elemental semiconductors; image sensors; pattern recognition equipment; silicon; MOSFET; amorphous Si:H; amorphous orientational edge detector; crystalline NMOS; input device; neural image sensors; pattern recognition; three-dimensional architecture; vertical integration; Amorphous materials; Amorphous silicon; Crystallization; Detectors; Image edge detection; MOS devices; MOSFETs; Object detection; Pattern recognition; Skeleton;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.168732

Filename

168732