مرکز منطقه ای اطلاع رساني علوم و فناوري - Fluorine Passivation in Gate Stacks of Poly-<formula formulatype="inline"> <img src="/images/tex/564.gif" alt="\\hbox {Si}/\\hbox {TaN}/\\hbox {HfO}_{2}"> </formula> (and <formula formulatype="inline"> <img src="/images/tex/565.gif" alt="\\hbox {HfSiON}/\

Title :

Fluorine Passivation in Gate Stacks of Poly- $\\hbox {Si}/\\hbox {TaN}/\\hbox {HfO}_{2}$ (and $\\hbox {HfSiON}/\</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Zhang, M.H. ; Zhu, F. ; Kim, H.S. ; Ok, I.J. ; Lee, Jack C.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Texas Mater. Inst., Univ. of Texas, Austin, TX</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>28</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2007</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3/1/2007 12:00:00 AM</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>195</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>197</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Fluorine passivation in poly-Si/TaN/HfO<sub>2</sub>/p-Si and poly-Si/TaN/HfSiON/HfO<sub>2</sub>/p-Si gate stacks with varying TaN thickness through gate ion implantation has been studied. It has been found that when TaN thickness was less than 15 nm, mobility and subthreshold swing improved significantly in HfO<sub>2</sub> nMOSFETs; while there was little performance improvement in HfSiON/HfO<sub>2</sub> nMOSFETs due to the blocking of F atoms by the HfSiON layer in gate dielectrics, as has been proved by the electron energy loss spectroscopy mapping</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOSFET; fluorine; hafnium compounds; ion implantation; passivation; silicon compounds; tantalum compounds; HfSiON-HfO<sub>2</sub>-Si; Si-TaN-HfO<sub>2</sub>; electron energy loss spectroscopy mapping; fluorine passivation; gate dielectrics; gate stacks; ion implantation; nMOSFET; Atomic layer deposition; Dielectric losses; Electrochemical impedance spectroscopy; Electron mobility; Energy loss; Hafnium oxide; Ion implantation; MOSFETs; Passivation; Performance loss; <formula formulatype=$ $hbox{HfO}_{2}$; $hbox{HfSiON}/hbox{HfO}_{2}$; Fluorine; TaN; gate implantation; high-$kappa$;