Title :
Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs
Author :
Zhang, M. ; Knoch, J. ; Appenzeller, Joerg ; Mantl, S.
Author_Institution :
Forschungszentrum Julich GmbH
fDate :
3/1/2007 12:00:00 AM
Abstract :
The impact of the gate oxide and the silicon-on-insulator (SOI) body thickness on the electrical performance of SOI Schottky-barrier (SB) MOSFETs with fully nickel silicided source and drain contacts is experimentally investigated. The subthreshold swing S is extracted from the experimental data and serves as a measure for the carrier injection through the SBs. It is shown that decreasing the gate oxide and body thickness allows to strongly increase the carrier injection and hence, a significantly improved on-state of SB-MOSFETs can be obtained
Keywords :
MOSFET; Schottky barriers; nickel compounds; silicon-on-insulator; SOI body thickness; carrier injection; drain contacts; gate oxide; nickel silicided source; silicon-on-insulator body thickness; subthreshold swing; ultrathin-body SOI Schottky-barrier MOSFET; Contacts; Data mining; Degradation; Electric variables; Hafnium; Lead compounds; MOSFETs; Nickel; Oxidation; Silicon on insulator technology; Carrier injection; Schottky-barrier (SB)-MOSFET; ultrathin-body silicon-on-insulator (SOI);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.891258
