DocumentCode :
1191870
Title :
A Low-Spurious Low-Power 12-bit 160-MS/s DAC in 90-nm CMOS for Baseband Wireless Transmitter
Author :
Seo, Dongwon ; McAllister, Gene H.
Author_Institution :
Qualcomm Inc., San Diego, CA, USA
Volume :
42
Issue :
3
fYear :
2007
fDate :
3/1/2007 12:00:00 AM
Firstpage :
486
Lastpage :
495
Abstract :
A low-spurious low-power 12-bit 160-MS/s digital to analog converter (DAC) for baseband wireless transmitter is proposed and demonstrated. Degenerated current switches are introduced and benefits of using them are discussed. Mismatch behavior under packaging-induced die stress is also presented. The mobility shift caused by package stress inherited from a thin-die is a dominant source of I/Q mismatch. A 2-channel I/Q DAC core consumes 4 mA with a 1.3/2.6 V dual supply. The 0.13 mm2 I/Q DAC core fabricated in 90-nm digital CMOS process with a highly-integrated digital processor achieves 74 dB SFDR, 55 dB SNDR, and -73 dB THD for a 975 kHz sinusoid at 153.6 MS/s sample rate.
Keywords :
CMOS integrated circuits; digital-analogue conversion; low-power electronics; radio transmitters; 1.3 V; 2.6 V; 4 mA; 90 nm; 975 kHz; CMOS; DAC; I/Q mismatch; baseband wireless transmitter; current switches; low power electronics; mismatch behavior; mobility shift; packaging induced die stress; shaped centroid; Baseband; Circuits; Digital-analog conversion; Low pass filters; Packaging; Power harmonic filters; Signal to noise ratio; Stress; Switches; Transmitters; Degenerated current switch; I/Q mismatch; digital-to-analog converter (DAC); package stress; shaped centroid;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2006.891722
Filename :
4114765
Link To Document :
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