Title :
90 nm TCAM cell design with leakage suppression technique
Author_Institution :
Dept. of Comput. Sci. & Eng., Nat. Chung Hsing Univ., Taichung
Abstract :
A leakage suppressed ternary content-addressable memory (TCAM) cell design is introduced, in which dasiadon´t care´ information is used to minimise the leakage power dissipated in the prefix CAM. The measurements based on 90 nm process technology show that without any performance penalty the design can deliver a leakage power reduction of 18%.
Keywords :
content-addressable storage; leakage currents; network synthesis; 90 nm TCAM cell design; leakage current; leakage power reduction; leakage suppressed ternary content-addressable memory cell design; leakage suppression technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.3733
