DocumentCode
1192146
Title
Gunn effect and high-injection phenomenon in heterojunction bipolar transistors
Author
Posse, V.A. ; Jalali, Bahram
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA
Volume
30
Issue
22
fYear
1994
fDate
10/27/1994 12:00:00 AM
Firstpage
1893
Lastpage
1894
Abstract
The transferred-electron effect in the collector region of heterojunction bipolar transistors is investigated. Conditions necessary for observation of Gunn instabilities are analysed and it is shown that stability of the conventional III-V HBT is ensured by the Kirk effect which occurs at a similar threshold current density as the Gunn effect
Keywords
Gunn effect; current density; heterojunction bipolar transistors; stability; Gunn effect; Gunn instabilities; III-V HBT; Kirk effect; collector region; heterojunction bipolar transistors; high-injection phenomenon; stability; threshold current density; transferred-electron effect;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941269
Filename
330011
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