• DocumentCode
    1192154
  • Title

    Pseudomorphic Ga0.2In0.8P/Ga0.47In 0.53As/InP HEMT grown by MOVPE using TBP and TBA

  • Author

    Yang, Y.F. ; Hsu, C.C. ; Yang, E.S.

  • Author_Institution
    Dept. of Electr. Eng., Columbia Univ., New York, NY
  • Volume
    30
  • Issue
    22
  • fYear
    1994
  • fDate
    10/27/1994 12:00:00 AM
  • Firstpage
    1894
  • Lastpage
    1895
  • Abstract
    A pseudomorphic Ga0.2In0.8P/Ga0.47In0.53 As/InP high electron mobility transistor grown by MOVPE using TBP and TBA is reported for the first time. The extrinsic transconductances of 480 and 620 mS/mm with the maximum output current of 660 and 780 mA/mm were achieved for the 1.2 μm gate length device at 300 and 77 K, respectively. These data are comparable to those of AlInAs/GaInAs HEMTs grown by MOVPE and MBE indicating the good material quality
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; semiconductor growth; vapour phase epitaxial growth; 1.2 micron; 480 to 620 mS/mm; 77 to 300 K; Ga0.2In0.8P-Ga0.47In0.53 As-InP; MOVPE growth; TBA; TBP; extrinsic transconductances; gate length; high electron mobility transistor; maximum output current; pseudomorphic HEMT;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941277
  • Filename
    330012
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1192154