Title :
10 Gbit/s optical demultiplexing and switching by sinusoidally driven InGaAsP electroabsorption modulators
Author :
Suzuki, M. ; Tanaka, Hiroya ; Matsushima, Y.
Author_Institution :
KDD R&D Labs., Saitama, Japan
fDate :
5/7/1992 12:00:00 AM
Abstract :
10 Gbit/s optical demultiplexing and switching were performed by sinusoidally driven InGaAsP electroabsorption modulators, for the first time. An optical gate with variable gate width was obtained just with sinusoidal voltage. In-line demultiplexing/switching by the modulator was effective in reducing the amplified spontaneous emission noise in optical amplifier systems.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication; optical modulation; optical switches; time division multiplexing; 10 Gbit/s; InGaAsP; amplified spontaneous emission noise; electroabsorption modulators; optical amplifier systems; optical demultiplexing; optical gate; optical noise reduction; optical switching; semiconductors; sinusoidal voltage; variable gate width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920591
