• DocumentCode
    11925
  • Title

    Composite Behavior of Multiple Memristor Circuits

  • Author

    Budhathoki, Ram Kaji ; Sah, Maheshwar Pd. ; Adhikari, Shyam Prasad ; Hyongsuk Kim ; Chua, Leon

  • Author_Institution
    Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea
  • Volume
    60
  • Issue
    10
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    2688
  • Lastpage
    2700
  • Abstract
    Composite characteristics of the parallel and serial connections of memristors are investigated. The memristor is one of the fundamental electrical elements, which has recently been successfully built. However, its electrical characteristics are not yet fully understood. When multiple memristors are connected to each other, the composite behavior of the devices becomes complicated and is difficult to predict, due to the polarity dependent nonlinear variation in the memristance of individual memristors. In this work, we investigate the relationships among flux, charge, and memristance of diverse composite memristors, using both linear and nonlinear memristor models, and analyze the characteristics of complex memristor circuits.
  • Keywords
    memristors; composite behavior; multiple memristor circuits; parallel connections; serial connections; Charge; composite behavior; flux; memristance; memristor;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2013.2244320
  • Filename
    6495497