Title :
Design and analysis of GaN HEMT based LNA with CPW matching
Author :
Sarathkrishna, S. ; Balamurugan, Karthigha ; Devi, M. Nirmala ; Jayakumar, M.
Author_Institution :
Dept. of Electron. & Commun. Eng, Amrita Vishwa Vidyapeetham, Coimbatore, India
Abstract :
GaN based devices are in great demand due to its rugged characteristics at extreme conditions. In this paper, design of GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) with coplanar waveguide matching is presented to understand the key aspects of high gain, low noise figure and high linearity. The LNA can be used in base station technologies as frequency of interest is from 0.6-3 GHz. It delivers gain of 23 dB and noise figure 0.3 dB and OIP3 upto 51 dBm. The linear performance presented here enables reconfigurable designs of LNA over multiple octaves of bandwidth.
Keywords :
MMIC; coplanar waveguides; gallium compounds; high electron mobility transistors; low noise amplifiers; CPW matching; GaN; HEMT based LNA; MMIC; OIP3; base station technologies; coplanar waveguide matching; frequency 0.6 GHz to 3 GHz; gain 23 dB; linearity; low noise amplifier; low noise figure; monolithic microwave integrated circuit; reconfigurable designs; Coplanar waveguides; Gain; Gallium nitride; HEMTs; Low-noise amplifiers; Noise figure; GaN HEMT; coplanar waveguide; low noise amplifier (LNA);
Conference_Titel :
Wireless and Optical Communications Networks (WOCN), 2014 Eleventh International Conference on
Conference_Location :
Vijayawada
Print_ISBN :
978-1-4799-3155-2
DOI :
10.1109/WOCN.2014.6923066
