DocumentCode :
1193193
Title :
Scalable Small-Signal and Noise Modeling for Deep-Submicrometer MOSFETs
Author :
Gao, Jianjun ; Werthof, Andreas
Author_Institution :
Sch. of Inf. Sci. & Technol., East China Normal Univ., Shanghai
Volume :
57
Issue :
4
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
737
Lastpage :
744
Abstract :
A new scalable noise and small-signal model for deep-submicrometer metal-oxide semiconductor field-effect transistors, which consist of multiple elementary cells is presented in this paper. It allows exact modeling of all noise and small-signal model parameters from elementary cell to large-size device. The scalable rules for noise and small-signal model parameters are given in detail. The experimental and theoretical results show that at same bias condition, good scaling of the noise, and small-signal model parameters can be achieved between the large-size devices and elementary cell. Model verification is carried out by comparison of measured and simulated S-parameters and noise parameters. Good agreement is obtained between the measured and modeled results for 4 times 0.6 times 18 mum, 8 times 0.6 times 12 mum, and 32 times 0.6 times 2 mum gatewidth (number of gate fingers times unit gatewidth times cells) 90 nm gatelength MOSFETs.
Keywords :
MOSFET; S-parameters; semiconductor device models; semiconductor device noise; S-parameter simulation; deep-submicrometer MOSFET; metal-oxide semiconductor field-effect transistor; model verification; multiple elementary cells; noise model; noise parameter measurement; scalable small-signal model; Equivalent circuits; MOSFET; noise modeling; parameter extraction; scalable model; semiconductor device modeling; small-signal modeling;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2009.2015075
Filename :
4801539
Link To Document :
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