Single-wafer process technology: enabling rapid SiGe BiCMOS development

Author

Schuegraf, Klaus

Author_Institution

Cypress Semicond., San Jose, CA, USA

Volume

16

Issue

2

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

121

Lastpage

127

Abstract

This paper explores the application of single-wafer processing (SWP) tools to rapidly create high-value added, innovative processes technologies, using the example of SiGe BiCMOS process technology development to highlight the unique advantages that SWP provides to rapidly develop a cost-effective and innovative platform. This paper also reviews the unique requirements necessary for SiGe BiCMOS technology development. SWP equipment is shown to be ideally suited to meeting both the technical and schedule requirements for rapidly and efficiently executing a technology development plan. In addition, the flexibility of single-wafer tooling is well suited to a lower volume technology without compromising the ability to modularly scale the SiGe unit process to meet higher volume production requirements.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; epitaxial growth; integrated circuit manufacture; integrated circuit technology; production; semiconductor materials; SWP tools; SiGe; production requirements; rapid SiGe BiCMOS development; schedule requirements; single-wafer process technology; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Manufacturing processes; Paper technology; Production; Semiconductor device manufacture; Silicon germanium; Temperature control; Thickness control;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2003.810940

Filename

1198018