Title :
Write-once diode/antifuse memory element with a sol-gel silica antifuse cured at low temperature
Author :
Jian Hu ; Branz, H.M. ; Stradins, P. ; Ward, S. ; Duda, A. ; Qi Wang ; Perlov, C. ; Jackson, W.B. ; Taussig, C.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
A write-once programmable memory element is based on a spin-coated sol-gel silica antifuse layer cured at 100/spl deg/C. This antifuse is integrated with a thin-film silicon diode deposited at 160/spl deg/C by hot-wire chemical vapor deposition. When a 3 to 5 V electrical pulse is applied across a diode/antifuse element, the silica breaks down suddenly and the current passing through the element increases irreversibly by more than about 10/sup 4/. The on-state exhibits a diode-like current-voltage characteristic with a forward-reverse asymmetry of nearly 100 at 1 V and is stable if there was hexamethyldisilazane treatment of the wet-gel film before curing.
Keywords :
chemical vapour deposition; diodes; silicon; sol-gel processing; thin films; write-once storage; 1 V; 100 C; 160 C; 3 to 5 V; Si; chemical vapor deposition; electrical pulse; electronic memory switching; hexamethyldisilazane treatment; sol-gel silica antifuse; thin-film silicon diode; wet-gel film; write-once diode-antifuse memory; write-once programmable memory element; Chemical elements; Chemical vapor deposition; Fabrication; Laboratories; P-i-n diodes; Semiconductor thin films; Silicon compounds; Sputtering; Substrates; Temperature; Antifuse; electronic memory switching; sol-gel made silica; thin-film diode;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.839218
