Title :
Simplification methods for accelerating simulation-based real-time scheduling in a semiconductor wafer fabrication facility
Author :
Kim, Yeong-Dae ; Shim, Sang-Oh ; Choi, Bum ; Hwang, Hark
Author_Institution :
Dept. of Ind. Eng., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea
fDate :
5/1/2003 12:00:00 AM
Abstract :
This paper presents a real-time scheduling methodology in a semiconductor wafer fab that produces multiple product types with different due dates. In the suggested real-time scheduling method, lot scheduling rules and batch scheduling rules are selected from sets of candidate rules based on information obtained from discrete event simulation. Since a rule combination that gives the best performance may vary according to the states of the fab, a selected rule combination is employed for a certain period of time and then a new combination is selected and employed. Since multiple simulation runs should be made in the simulation-based real-time scheduling (SBRTS) method, it may take excessively long computation time to react to unexpected events. To reduce response time, we suggest three techniques for accelerating rule comparison. We test these techniques as well as other operational policies that can be used in the SBRTS method through computational experiments on a number of test problems.
Keywords :
batch processing (industrial); discrete event simulation; integrated circuit manufacture; production control; real-time systems; semiconductor process modelling; batch scheduling rules; discrete event simulation; due dates; lot scheduling rules; multiple product types; operational policies; response time; rule comparison acceleration; semiconductor wafer fabrication facility; simplification methods; simulation-based real-time scheduling; Acceleration; Application specific integrated circuits; Computational modeling; Discrete event simulation; Fabrication; Job shop scheduling; Processor scheduling; Production; Testing; Workstations;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2003.811890