Title :
Effects of PAI on interface properties between HfSiO gate dielectric and silicon substrate
Author :
Wada, H. ; Woo, J.C.S.
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
Abstract :
The effects of preamorphization implantation (PAI) on the interface properties between hafnium-silicate (HfSiO) gate dielectrics and silicon substrates were examined. In the case of an NH/sub 3/ nitrided interface, it was found that the PAI can improve the interface trap density (D/sub IT/) compared with the no PAI case. However, for the PAI samples, it was also found that samples with sacrificial screening oxide (Sac Ox) had worse interface properties compared with the samples without Sac Ox. It is attributed to the recoiled oxygen from Sac Ox during PAI.
Keywords :
amorphisation; dielectric properties; hafnium compounds; interface states; ion implantation; nitrogen compounds; silicon; HfSiO; HfSiO gate dielectric; NH/sub 3/; interface properties; interface trap density; nitrided interface; preamorphization implantation; sacrificial screening oxide; silicon process technology; silicon substrate; Hafnium compounds; Interface phenomena; Ion implantation; Nitrogen compounds; Silicon; Gate dielectrics; silicon process technology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.841350
