DocumentCode :
1194808
Title :
Disperse pipe trench on silicon by electrochemical etching with pulsed voltage or pulsed illumination
Author :
Lin, J.-C. ; Tsai, W.-C. ; Chen, W.-L.
Author_Institution :
Dept. of Electron. Eng., St. John´´s Univ., Taipei
Volume :
43
Issue :
4
fYear :
2007
Firstpage :
247
Lastpage :
248
Abstract :
A novel electrochemical etching on silicon is proposed. A pulsed voltage or a pulsed illumination is used to make a pulsed anodic current that produces a magnetic field around the anodic current path. The Lorentz force centralises the hole accumulating path. Disperse pipe trench patterns can then be obtained
Keywords :
anodisation; electrochemistry; elemental semiconductors; etching; silicon; Lorentz force; Si; anodic current path; disperse pipe trench pattern; electrochemical etching; magnetic field; pulsed anodic current; pulsed illumination; pulsed voltage; silicon; wet etching;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20073657
Filename :
4117480
Link To Document :
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