DocumentCode :
1194950
Title :
High frequency effects in MOSFET-CTow - Thomas biquads
Author :
Shi, Bing-Xue ; Khoury, John ; Tsividis, Yannis
Volume :
33
Issue :
6
fYear :
1986
fDate :
6/1/1986 12:00:00 AM
Firstpage :
648
Lastpage :
651
Abstract :
The MOSFET- 
version of the Tow-Thomas activeRC biquadratic filter operated at high frequencies is considered. Formulas for the deviation of quality factor and center frequency due to the finite gain-bandwidth product of the op amps and the intrinsic distributed- RC effects of the MOS transistors are presented and verified by computer simulation. Passive compensation methods are considered for eliminating the degradation of filter performance due to the above effects.
version of the Tow-Thomas activeRC biquadratic filter operated at high frequencies is considered. Formulas for the deviation of quality factor and center frequency due to the finite gain-bandwidth product of the op amps and the intrinsic distributed- RC effects of the MOS transistors are presented and verified by computer simulation. Passive compensation methods are considered for eliminating the degradation of filter performance due to the above effects.Keywords :
Biquadratic filters; Distributed-parameter circuits, RC; MOS integrated circuits, analog; Active filters; Capacitance; Circuit analysis computing; Circuits and systems; Frequency measurement; MOSFET circuits; Operational amplifiers; Q factor; Resistors; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0098-4094
Type :
jour
DOI :
10.1109/TCS.1986.1085957
Filename :
1085957
Link To Document :
