Title :
Theoretical analysis of the influences of barrier-enhancement layers on transient responses of MSM photodetectors
Author_Institution :
NTT LSI Labs., Atsugi, Japan
fDate :
6/1/1992 12:00:00 AM
Abstract :
Transient responses of In0.53Ga0.47As MSM PDs with abrupt and graded barrier-enhancement layers are simulated by using an ensemble Monte Carlo technique. The effect of the graded layer on transient responses and an appropriate graded-layer thickness for achieving fast responses are discussed. Also, a relevant device scaling law is proposed for In0.53Ga0.,47As MSM PDs with graded barrier-enhancement layers
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor device models; In0.53Ga0.47As; MSM photodetectors; Monte Carlo technique; abrupt barriers; analysis; barrier-enhancement layers; device scaling law; graded barrier-enhancement layers; graded layer; semiconductors; transient responses; Acoustic materials; Dark current; Dielectric materials; Gallium arsenide; Indium phosphide; Monte Carlo methods; Optical devices; Optical materials; Phonons; Transient analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
