Title :
Analysis of low signal level characteristics for high-sensitivity CCD charge detector
Author :
Ohsawa, Shinji ; Matsunaga, Yoshiyuki
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
6/1/1992 12:00:00 AM
Abstract :
Low signal level characteristics for a highly sensitive floating surface amplifier (FSA) have been analyzed using a two-dimensional device simulator. The linearity, within 5% variance of charge/voltage conversion ratio from 0.5 to 4000 signal electrons, has been confirmed with this simulation. This result shows that it is possible to make the charge/voltage conversion ratio under 10 signal electrons linear for an actual amplifier. Furthermore, it is shown to be possible to improve the charge/voltage conversion ratio by a factor of 2 over that of the fabricated device
Keywords :
CCD image sensors; capacitance; digital simulation; electronic engineering computing; surface potential; 1D capacitance; charge/voltage conversion ratio; floating surface amplifier; high-sensitivity CCD charge detector; linearity; low signal level characteristics; surface channel potential modulation; two-dimensional device simulator; Analytical models; Charge carrier processes; Charge coupled devices; Circuit simulation; Detectors; Electrons; Image converters; Linearity; Signal analysis; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
