Title :
Investigation of the physical modeling of the gate-depletion effect
Author :
Habas, Predrag ; Faricelli, John V.
Author_Institution :
Inst. for Microelectron., Tech. Univ., Vienna, Austria
fDate :
6/1/1992 12:00:00 AM
Abstract :
The physical modeling of the gate for the analysis of the gate-depletion effect is investigated. The accuracy of the assumed rigid-parabolic-band model is examined by comparing the numerical simulation with the experimental C-V data. Disagreement between calculation and measurement is observed and physical phenomena which may be responsible for it are proposed. An engineering approach to remove the disagreement is given. The presented investigations may be of general interest for modeling of heavily doped space-charge regions
Keywords :
capacitance; doping profiles; heavily doped semiconductors; insulated gate field effect transistors; semiconductor device models; C-V characteristics; MINIMOS; MOSFET; doping concentrations; gate-depletion effect; heavily doped space-charge regions; numerical simulation; physical modeling; rigid-parabolic-band model; Capacitance; Capacitance-voltage characteristics; MOS devices; MOSFET circuits; Microelectronics; Numerical simulation; Semiconductor process modeling; Steady-state; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
