Title :
Impact of distributed gate resistance on the performance of MOS devices
Author :
Razavi, Behzad ; Yan, Ran-Hong ; Lee, Kwing F.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
11/1/1994 12:00:00 AM
Abstract :
This paper describes the impact of gate resistance on cut-off frequency (fT), maximum frequency of oscillation (fmax ), thermal noise, and time response of wide MOS devices with deep submicron channel lengths. The value of fT is proven to be independent of gate resistance even for distributed structures. An exact relation for fmax is derived and it is shown that, to predict fmax, thermal noise, and time response, the distributed gate resistance can be divided by a factor of 3 and lumped into a single resistor in series with the gate terminal
Keywords :
MOSFET; electric resistance; equivalent circuits; oscillations; semiconductor device models; semiconductor device noise; thermal noise; transient response; MOS devices; MOSFET; cutoff frequency; deep submicron channel lengths; distributed gate resistance; maximum oscillation frequency; small-signal model; thermal noise; time response; Automatic control; Circuit stability; Cutoff frequency; Linear matrix inequalities; MOS devices; Network address translation; Network synthesis; Sufficient conditions; Thermal resistance; Time factors;
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
