DocumentCode
1195883
Title
Influence of Injector Doping Concentration on the Performance of InP-Based Quantum-Cascade Lasers
Author
Mann, Christian ; Yang, Quankui ; Fuchs, Frank ; Bronner, Wolfgang ; Köhler, Klaus ; Wagner, Joachim
Author_Institution
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg
Volume
42
Issue
10
fYear
2006
Firstpage
994
Lastpage
1000
Abstract
The influence of injector doping concentration Ninj on the performance of InP-based quantum-cascade (QC) lasers is investigated for devices emitting around 9.2-mum wavelength and injector doping concentrations between 1times1017 cm-3 and 3times1017 cm-3. The threshold current density, the dynamic range, the maximum emitted output power as well as the maximum operating temperature are found to increase with increasing N inj. All in all, there exists no optimal value of Ninj per se. In fact, the injector doping concentration has to be adjusted individually depending whether emphasis is placed on obtaining low threshold current densities or on high-power operation
Keywords
III-V semiconductors; indium compounds; laser beams; quantum cascade lasers; semiconductor doping; 9.2 mum; InP; InP-based lasers; current densities; dynamic range; high-power operation; injector doping concentration; quantum-cascade lasers; threshold current density; Doping; Laser theory; Lasers and electrooptics; Optical design; Phonons; Power generation; Quantum cascade lasers; Quantum well lasers; Spectroscopy; Threshold current; Dynamic range; injector doping concentration; quantum-cascade (QC) laser;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2006.881411
Filename
1688029
Link To Document