Title :
1/f noise sources
Author_Institution :
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
fDate :
11/1/1994 12:00:00 AM
Abstract :
This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an α value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on α, α may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The α values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices
Keywords :
1/f noise; carrier mobility; semiconductor device models; semiconductor device noise; α value; 1/f noise sources; homogeneous semiconductor samples; mobility noise; number noise; semiconductor devices; theoretical models; Acoustical engineering; Conductors; Electron emission; Electron traps; Fluctuations; Noise generators; Noise measurement; Semiconductor device noise; Semiconductor device reliability; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
