DocumentCode :
1197162
Title :
1/f noise sources
Author :
Hooge, F.N.
Author_Institution :
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
Volume :
41
Issue :
11
fYear :
1994
fDate :
11/1/1994 12:00:00 AM
Firstpage :
1926
Lastpage :
1935
Abstract :
This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an α value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on α, α may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The α values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices
Keywords :
1/f noise; carrier mobility; semiconductor device models; semiconductor device noise; α value; 1/f noise sources; homogeneous semiconductor samples; mobility noise; number noise; semiconductor devices; theoretical models; Acoustical engineering; Conductors; Electron emission; Electron traps; Fluctuations; Noise generators; Noise measurement; Semiconductor device noise; Semiconductor device reliability; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.333808
Filename :
333808
Link To Document :
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