DocumentCode :
1197257
Title :
Low field operation of hot electron light emitting devices: quasi-flat-band model
Author :
Wah, J.Y. ; Balkan, N.
Author_Institution :
Fac. of Eng., Multimedia Univ., Cyberjaya, Malaysia
Volume :
151
Issue :
6
fYear :
2004
Firstpage :
482
Lastpage :
485
Abstract :
Several novel laterally biased HELLISH (hot electron light emission and lasing in semiconductor heterostructure) devices have previously been reported and demonstrated. These light emitting devices are normally operated at high applied fields to heat carriers to a point where they can transfer into the quantum well via tunnelling or thermionic emission. However, it has been observed that, in most devices, light emission occurs at relatively low applied fields. In this region, the fields are too low for significant heating of carriers. Therefore, the mechanism for light emission in this region cannot be explained by hot electron effects. The results illustrating the low field operation of HELLISH devices are presented together with a quasi-flat-band model.
Keywords :
hot carriers; semiconductor device models; semiconductor heterojunctions; thermionic emission; tunnelling; HELLISH; heat carriers; hot electron light emission and lasing in semiconductor heterostructure; hot electron light emitting devices; low field operation; quantum well; quasiflat-band model; thermionic emission; tunnelling;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:20040783
Filename :
1374140
Link To Document :
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