Title :
The impact of device scaling on the current fluctuations in MOSFET´s
Author :
Tsai, Ming-Horn ; Ma, Tso-Ping
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fDate :
11/1/1994 12:00:00 AM
Abstract :
The impact of device scaling on modern MOS technology is discussed in terms of the random telegraph signals and 1/f noise in MOSFET´s. In addition to the more obvious effects of enhanced current fluctuations as the device is scaled down, we will show the influence of nonuniform distribution of threshold voltages along the channel in the context of device scaling. The role of fast interface states on the drain current fluctuations is also discussed. It will be shown that, compared to the oxide traps, fast interface states give rise to higher frequency RTS and 1/f noise, and that they become more important for devices operating in weak inversion
Keywords :
1/f noise; MOSFET; current fluctuations; interface states; inversion layers; semiconductor device noise; 1/f noise; MOSFETs; current fluctuations; device scaling; fast interface states; nonuniform distribution; random telegraph signals; threshold voltages; weak inversion; Capacitance measurement; Charge measurement; Current measurement; Fluctuations; Frequency; Interface states; MOSFET circuits; Semiconductor device noise; Telegraphy; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
