Title :
Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET´s
Author :
Sitte, Renate ; Dimitrijev, Sima ; Harrison, H.Barry
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Nathan, Qld., Australia
fDate :
11/1/1994 12:00:00 AM
Abstract :
The effects of typical manufacturing fluctuations upon four electrical device parameters: threshold voltage, transconductance, substrate current and off current have been studied for deep submicron MOSFET´s (0.1 μm). The analysis reveals that the electrical parameter sensitivity in deep submicron devices differs from micron size devices, making a revision of the validity of conventional semiconductor manufacturing heuristics for future technology mandatory
Keywords :
MOS integrated circuits; MOSFET; fluctuations; integrated circuit manufacture; semiconductor device manufacture; sensitivity analysis; 0.1 micron; deep submicron MOSFET; electrical device parameters; electrical parameter sensitivity; manufacturing fluctuations; offcurrent; substrate current; threshold voltage; transconductance; Annealing; Boron; Circuit simulation; Fluctuations; Implants; MOSFET circuits; Manufacturing; Semiconductor device manufacture; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
