Title :
Ultra-compact 350 GHz gain-bandwidth product 40 Gbit/s predriver IC in SiGe bipolar technology
Author :
Schick, C. ; Weiß, H. ; Hernandez-Guillén, F. ; Trasser, A. ; Schumacher, H.
Author_Institution :
Dept. of Electron Devices & Circuits, Univ. of Ulm, Germany
Abstract :
An ultra-compact 0.36 mm2 differential wideband amplifier fabricated using SiGe technology is presented. Measurements show an on-wafer gain of 20.8 dB and a 3 dB cutoff frequency of 32.0 GHz. The mounted amplifier´s gain is 19.5 dB. The circuit is intended to operate as a predriver in a 40 Gbit/s fibre-optic communication system.
Keywords :
Ge-Si alloys; bipolar analogue integrated circuits; differential amplifiers; driver circuits; millimetre wave amplifiers; millimetre wave integrated circuits; optical fibre communication; wideband amplifiers; 19.5 dB; 20.8 dB; 32.0 GHz; 350 GHz; 40 Gbit/s; SiGe; SiGe bipolar technology; amplifier gain; cut-off frequency; differential wideband amplifier; fibre-optic communication system; on-wafer gain; ultra-compact predriver integrated circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20052720
