DocumentCode :
1198788
Title :
High performance laser with nanopatterned active layer by selective area epitaxy
Author :
Elarde, V.C. ; Bryce, A.C. ; Coleman, J.J.
Author_Institution :
Micro & Nanotechnology Lab., Univ. of Illinois, Urbana, IL, USA
Volume :
41
Issue :
20
fYear :
2005
Firstpage :
1122
Lastpage :
1124
Abstract :
Lasers containing a nanopatterned active layer demonstrating excellent threshold characteristics are presented. The nanopatterned active layer is fabricated using high-resolution electron beam lithography and selective-area metal organic chemical vapour deposition crystal growth. Results demonstrating an order of magnitude improvement over previous results are reported.
Keywords :
MOCVD; electron beam lithography; nanopatterning; quantum dot lasers; semiconductor epitaxial layers; MOCVD; crystal growth; electron beam lithography; high performance laser; metal organic chemical vapour deposition; nanopatterned active layer; quantum dot lasers; selective area epitaxy; threshold characteristics;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20052936
Filename :
1522163
Link To Document :
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