Title :
A new GaAs technology for stable FETs at 300 degrees C
Author :
Fricke, K. ; Hartnagel, Hans L. ; Schütz, R. ; Schweeger, G. ; Würfl, J.
Author_Institution :
Inst. fuer Hochfrequenztech., Tech. Hochschule Darmstadt, West Germany
Abstract :
A technology for the fabrication of GaAs devices for operation at 300 degrees C is presented. The high reliability of the devices is mainly due to diffusion barrier of WSi/sub 2/ in the ohmic contacts and to an optimized Si/sub 3/N/sub 4/ passivation. It is shown that MESFETs produced with this technology demonstrate a remarkable stability of their characteristics, even after 100 h of storage at 300 degrees C, and only a little degradation after 100 h at 400 degrees C.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ohmic contacts; passivation; semiconductor technology; silicon compounds; tungsten compounds; 100 h; 1000 h; 300 C; 400 C; GaAs technology; MESFETs; Si/sub 3/N/sub 4/ passivation; WSi/sub 2/ diffusion barriers; fabrication; high temperature electronics; ohmic contacts; operation at 300 degrees C; reliability; semiconductors; silicides; stability; FETs; Gallium arsenide; Gold; MESFETs; Microwave devices; Ohmic contacts; Passivation; Silicon carbide; Stability; Temperature;
Journal_Title :
Electron Device Letters, IEEE
