Title :
InAs quantum dot photonic crystal lasers and their temperature dependence
Author :
Tian Yang ; Lipson, S. ; O´Brien, J.D. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. Eng. & Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
We report on the demonstration of optically pumped photonic crystal lasers with InAs quantum dot active regions operating at room temperature near 1310 nm. Absorbed threshold pump powers as low as 25 μW are observed. We also extract a characteristic temperature of 17 K, which is attributed to limitations caused by surface recombination.
Keywords :
III-V semiconductors; indium compounds; optical pumping; photonic crystals; quantum dot lasers; surface recombination; thermo-optical effects; 1310 nm; 17 K; 25 muW; 293 to 298 K; InAs; InAs quantum dot lasers; absorbed pump powers; optically pumped lasers; photonic crystal lasers; room temperature; surface recombination; temperature dependence; threshold pump powers; Electron beams; Gallium arsenide; High speed optical techniques; Optical coupling; Optical pumping; Photonic crystals; Pump lasers; Quantum dot lasers; Temperature dependence; US Department of Transportation; InAs; laser; photonic crystal; quantum dot (QD);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.857975
