Low energy ion bombardment and surface spin pinning in yttrium iron garnet films

Author

Chernakova, A.K. ; Stancil, Daniel D.

Author_Institution

Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA

Volume

30

Issue

6

fYear

1994

fDate

11/1/1994 12:00:00 AM

Firstpage

4530

Lastpage

4532

Abstract

Surface spin pinning and physical and chemical changes on the surface of yttrium iron garnet crystalline films were investigated. The magnetic properties of these films as determined by magnetostatic surface waves and ferromagnetic resonance measurements were studied as functions of Ar ion energy E_i=200-1000 eV and ion dose D_i=10¹⁴-10¹⁸ ions/cm². The surface spin pinning appears in a mildly damaged, non-stoichiometric layer with oxygen depletion. An alternative mechanism for the surface spin pinning effect based on an anisotropy associated with the oxygen vacancies and iron ion valence changes is proposed

Keywords

ferromagnetic resonance; garnets; ion beam effects; magnetic thin films; magnetostatic surface waves; vacancies (crystal); yttrium compounds; 200 to 1000 eV; O vacancies; YFe5O12; YIG; anisotropy; ferromagnetic resonance; garnet films; low energy ion bombardment; magnetostatic surface waves; nonstoichiometric layer; surface spin pinning; Chemicals; Crystallization; Garnet films; Iron; Magnetic anisotropy; Magnetic films; Magnetic properties; Magnetic resonance; Perpendicular magnetic anisotropy; Yttrium;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.334138

Filename

334138