DocumentCode :
1201017
Title :
Overerase phenomena: an insight into flash memory reliability
Author :
Chimenton, Andrea ; Pellati, Paolo ; Olivo, Piero
Author_Institution :
Dipt. di Ingegneria, Univ. of Ferrara, Italy
Volume :
91
Issue :
4
fYear :
2003
fDate :
4/1/2003 12:00:00 AM
Firstpage :
617
Lastpage :
626
Abstract :
The most important reliability issues related to the erasing operation in flash memories are, still today, caused by single bit failures. In particular, the overerase of tail and fast bits affects the threshold voltage distribution width, causing bit-line leakage that produces read/verify circuitry malfunctions, affects the programming efficiency due to voltage drop, and causes charge-pump circuitry failure. This brief overview explores the most important characteristics of these anomalous bits, their relation with the erratic erase phenomena and their impact on flash memory reliability. Identification techniques, experimental results, and physical models are also discussed.
Keywords :
failure analysis; flash memories; integrated circuit modelling; integrated circuit reliability; voltage distribution; bit-line leakage; charge-pump circuitry failure; erasing operation; erratic erase phenomena; flash memory reliability; identification techniques; overerase phenomena; overview; physical models; programming efficiency; read/verify circuitry malfunctions; single bit failures; threshold voltage distribution width; voltage drop; Flash memory; Integrated circuit reliability; Integrated circuit technology; Nonvolatile memory; Probability distribution; Semiconductor device reliability; Semiconductor memory; Stress; Tail; Threshold voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2003.811713
Filename :
1199088
Link To Document :
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