• DocumentCode
    1201367
  • Title

    Forsterite film formation and grain growth in 3% Si steel

  • Author

    Cunha, Marco A. ; Cesar, G.M.M.

  • Author_Institution
    Cia Acos Especiais Itabira, Timoteo, Brazil
  • Volume
    30
  • Issue
    6
  • fYear
    1994
  • fDate
    11/1/1994 12:00:00 AM
  • Firstpage
    4890
  • Lastpage
    4892
  • Abstract
    The forsterite film in 3% Si steel is formed by a solid state reaction of the annealing separator, MgO, with SiO2 that results from the reduction of the fayalite layer in the hydrogen atmosphere in the high temperature anneal. In this work, secondary recrystallization was about complete at 1000°C. After that temperature tertiary recrystallization can occur if the boundary drag of the second phase particles can be overcome. Addition of phosphates to the annealing separator affects the morphology of the forsterite film and can have an important effect on tertiary recrystallization by affecting the rate of decrease of the boundary-drag and/or the surface energy relationship
  • Keywords
    annealing; ferromagnetic materials; grain growth; iron alloys; magnesium compounds; recrystallisation; silicon alloys; surface energy; 1000 degC; Fe-Si; Fe-Si steel; H2 atmosphere; Mg2SiO4; MgO; SiO2; annealing separator; boundary drag; fayalite layer; forsterite film formation; grain growth; high temperature anneal; morphology; phosphates; second phase particles; secondary recrystallization; solid state reaction; surface energy; tertiary recrystallization; Annealing; Atmosphere; Optical films; Optical microscopy; Particle separators; Scanning electron microscopy; Semiconductor films; Steel; Strips; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.334256
  • Filename
    334256