Title :
A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition
Author :
Osowski, M.L. ; Cockerill, T.M. ; Lammert, R.M. ; Forbes, D.V. ; Ackley, D.E. ; Coleman, J.J.
Author_Institution :
Mater. Res. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
Three-step selective area metalorganic chemical vapor deposition is used to fabricate strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LEDs. We have fabricated a device with a continuous variation in quantum well thickness along its length by using a tapered oxide width mask for the active region regrowth. A spectral emission width of 80 nm is obtained.<>
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting diodes; semiconductor growth; semiconductor quantum wells; InGaAs-GaAs-AlGaAs; active region regrowth; broad spectrum LED; quantum well thickness; selective-area metalorganic chemical vapor deposition; single quantum well; spectral emission width; strained-layer; tapered oxide width mask; three-step; Chemical vapor deposition; Laser feedback; Light emitting diodes; Light sources; Optical feedback; Optical transmitters; Quantum well lasers; Stimulated emission; Superluminescent diodes; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
