An integrated low power highly linear 2.4-GHz CMOS receiver front-end based on current amplification and mixing

Author

Ickjin Kwon ; Kwyro Lee

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

15

Issue

1

fYear

2005

Firstpage

36

Lastpage

38

Abstract

A low power 2.4-GHz complementary metal oxide semiconductor (CMOS) receiver front-end using highly linear mixer based on current amplification and mixing is reported. In the proposed mixer, linearity is greatly improved by using current mirror amplifier and transconductance linearization using multiple gated transistors. Single IF direct conversion receiver (DCR) architecture is used to achieve higher level of integration and to relax the problem of DCR. The fully integrated receiver front end is fabricated in 0.18-μm CMOS technology and HP3 of -9 dBm with a gain of 32 dB and noise figure of 6.5 dB are obtained at 8.8 mW power consumption.

Keywords

CMOS integrated circuits; UHF integrated circuits; UHF mixers; current mirrors; low-power electronics; microwave receivers; 0.18 micron; 2.4 GHz; 32 dB; 6.5 dB; 8.8 mW; CMOS receiver front-end; IF direct conversion receiver; current amplification; current mirror amplifier; linear mixer; multiple gated transistors; transconductance linearization; Baseband; CMOS technology; Circuits; Costs; Energy consumption; Filters; Gain; Linearity; Mirrors; Noise figure; Complementary metal oxide semiconductor (CMOS) receiver front-end; current amplifier; linearization; low power; single IF;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2004.840976

Filename

1377345