DocumentCode :
1203571
Title :
A New DC Transistor Differential Amplifier
Author :
Hilbiber, David F.
Volume :
8
Issue :
4
fYear :
1961
fDate :
12/1/1961 12:00:00 AM
Firstpage :
434
Lastpage :
439
Abstract :
The stable amplification of low-level signals of less than 1 mv magnitude has usually been done with a carrier-type feedback amplifier employing a complex modulation-demodulation system incorporating a short-lived and bulky mechanical chopper. The much simpler all-transistor dc differential amplifier, however, has not been suitable due to drifts in gain and operating point during aging and temperature variations. The purpose of this paper is to relate improvements in both of these respects as a result of using planar silicon transistors described by Hoerni and a compound transistor circuit. Equivalent input drifts of 3uv^{\\circ} C to 5uv/^{\\circ} C have been attained over the temperature range of-70 °C to +125°C, with negligible gain variations. This circuit also offers single-ended as well as differential output capabilities.
Keywords :
Solid-state circuits; Aging; Choppers; Circuits; Differential amplifiers; Feedback amplifiers; Impedance; Radiative recombination; Silicon; Temperature distribution; Voltage;
fLanguage :
English
Journal_Title :
Circuit Theory, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2007
Type :
jour
DOI :
10.1109/TCT.1961.1086848
Filename :
1086848
Link To Document :
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