DocumentCode :
1203861
Title :
Microwave noise performance and modeling of SiGe-based HFETs
Author :
Aguilar, Mauro Enciso ; CROZAT, PAUL ; Hackbarth, Thomas ; Herzog, Hans-Joest ; Aniel, Frédéric
Author_Institution :
Inst. d´´Electronique Fondamentale, Paris-Sud Univ., Orsay, France
Volume :
52
Issue :
11
fYear :
2005
Firstpage :
2409
Lastpage :
2415
Abstract :
Microwave noise performance of SiGe-based heterostructure field effect transistors (HFETs) is presented. Noise parameters for devices with buried channel fabricated on several virtual substrates are discussed. The impact of such strain relieved buffers on device noise performance is estimated by a proper noise de-embedding technique. Then, the noise properties measured in the 2.5-18-GHz frequency range are compared with those of other technologies. Noise parameters of SiGe HFETs are simulated using Pospieszalski´s and Van Der Ziel´s noise models. Some detrimental effects like access resistances and self-heating effects that negatively impact the microwave noise behavior are discussed and some alternatives to overwhelm them are proposed.
Keywords :
Ge-Si alloys; microwave field effect transistors; semiconductor device models; semiconductor device noise; 2.5 to 18 GHz; HFET modeling; Pospieszalski´s noise model; SiGe; Van Der Ziel noise model; access resistances; buried channel fabrication; heterostructure field effect transistors; microwave noise performance; noise de-embedding technique; self-heating effects; Capacitive sensors; Design automation; FETs; Germanium silicon alloys; HEMTs; MODFETs; Microwave devices; Rough surfaces; Silicon germanium; Surface roughness; Computer-aided design (CAD); SiGe; heterostructure field-effect transistors (HFETs); microwave noise; noise modeling; noise parameters; strained-silicon; virtual substrate (VS);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2005.857170
Filename :
1522677
Link To Document :
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