Title :
Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices
Author :
Paasschens, Jeroen C J ; Scholten, Andries J. ; Van Langevelde, Ronald
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
The Klaassen-Prins equation is the standard equation for calculating the drain thermal noise of long-channel MOSFETs. We show that the Klaassen-Prins equation is not always valid, even for MOSFETs. We present generalizations to the Klaassen-Prins equation that include velocity saturation effects of short-channel MOSFETs and that comprise also induced gate noise.
Keywords :
MOSFET; difference equations; semiconductor device models; semiconductor device noise; shot noise; thermal noise; Klaassen-Prins equation; MOSFET; compact modeling; induced gate noise; semiconductor device modeling; semiconductor devices noise; shot noise; thermal noise; velocity saturation effects; Circuit noise; Conductivity; Differential equations; MOSFETs; Radio frequency; Resistors; Semiconductor device modeling; Semiconductor device noise; Semiconductor devices; Threshold voltage; Compact modeling; MOSFET; RF CMOS; high-frequency; induced gate noise; noise; semiconductor device modeling; shot noise; thermal noise;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.857189
