مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1204531

Title :

Au/Pt/Ti/Ni ohmic contacts to p-ZnTe

Author :

Mochizuki, K. ; Terano, Akihisa ; Momose, M. ; Taike, A. ; Kawata, Masakatsu ; Gotoh, J. ; Nakatsuka, Shoko

Author_Institution :

Central Res. Lab., Hitachi Ltd., Tokyo

Volume :

Issue :

fYear :

1994

fDate :

11/10/1994 12:00:00 AM

Firstpage :

1984

Lastpage :

1985

Abstract :

Ohmic contacts of Au/Pd/Ti/Ni to p-ZnTe show a minimum specific contact resistance of 10^-6 Ωcm² for a p-type doping level of 3×10¹⁹ cm^-3 and at an annealing temperature of 300°C. The Ni and Ti layers are very effective in improving the electrical properties of these contact

Keywords :

II-VI semiconductors; annealing; contact resistance; gold; nickel; ohmic contacts; platinum; semiconductor-metal boundaries; titanium; zinc compounds; 300 C; Au-Pt-Ti-Ni-ZnTe; annealing temperature; electrical properties; ohmic contacts; p-type doping level; specific contact resistance;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19941326

Filename :

335633

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1204531