Title :
0.2 μm AlSb/InAs HEMTs with 5 V gate breakdown voltage
Author :
Boos, J. Brad ; Kruppa, W. ; Park, DaeLim ; Shanabrook, B.V. ; Bennett, Brian R.
Author_Institution :
Naval Res. Lab., Washington, DC
fDate :
11/10/1994 12:00:00 AM
Abstract :
DC and microwave measurements on AlSb/InAs HEMTs with a gate length of 0.21 μm are reported. The reverse gate characteristics exhibit relatively low gate leakage current and gate-drain breakdown voltages as high as 5 V. Equivalent circuit modelling yields an fT of 110 GHz after removal of the gate bonding pad capacitance. The bias dependence of fmax is examined indicating a significant reduction in the unilateral gain due to impact ionisation
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; electric breakdown; high electron mobility transistors; impact ionisation; indium compounds; leakage currents; microwave field effect transistors; semiconductor device models; 0.2 micron; 110 GHz; 5 V; AlSb-InAs; DC measurements; HEMT; equivalent circuit modelling; gate-drain breakdown voltages; impact ionisation; leakage current; microwave measurements; reverse gate characteristics; unilateral gain reduction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941316
