The Effect of Incomplete Ionization on the Turn-Off Behavior of FS IGBTs

Author

Hsieh, Alice Pei-Shan ; Camuso, G. ; Udrea, F. ; Yi Tang ; Chiu Ng ; Ranjan, Niraj ; Charles, Adam

Author_Institution

Eng. Dept., Univ. of Cambridge, Cambridge, UK

Volume

35

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

105

Lastpage

107

Abstract

This letter demonstrates for the first time the effect of the incomplete ionization (I.I.) of the transparent p-anode layer on the static and dynamic characteristics of the field-stop insulated gate bipolar transistors (FS IGBTs). This effect needs to be considered in FS IGBTs TCAD modeling to match accurately the device characteristics across a wide range of temperatures. The acceptor ionization energy (EA) governing the I.I. mechanism for the p-anode is extracted via matching the experimental turn-off waveforms and the static performance with Medici simulator.

Keywords

insulated gate bipolar transistors; ionisation; semiconductor device models; technology CAD (electronics); FS IGBT TCAD modeling; Medici simulator; acceptor ionization energy; dynamic characteristics; field-stop insulated gate bipolar transistors; incomplete ionization; static characteristics; transparent p-anode layer; turn-off behavior; Impurities; Insulated gate bipolar transistors; Integrated circuit modeling; Ionization; Plasma temperature; Temperature distribution; Temperature measurement; Field-stop insulated gate bipolar transistor (FS IGBT); acceptor ionization energy $(E_{A})$; incomplete ionization (I.I.); injection efficiency $(gamma_{rm E})$;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2288027

Filename

6678775