Title :
High resistivity InP:Ti,Be by GSMBE
Author :
Salaun, S. ; Gauneau, M. ; Le Corre, A. ; Mottet, Serge ; Viallet, J.E.
Author_Institution :
CNET, Lannion
fDate :
11/24/1994 12:00:00 AM
Abstract :
The authors report the growth, by GSMBE and the semi-insulating behaviour of codoped InP:Ti,Be with high resistivities up to 4×10 7 Ωcm. Current-voltage measurements have been performed and good agreement has been found between experiment and theory using numerical simulation tools
Keywords :
III-V semiconductors; beryllium; chemical beam epitaxial growth; electrical conductivity; indium compounds; semiconductor epitaxial layers; semiconductor growth; titanium; GSMBE; InP:Ti,Be; current-voltage measurements; gas source MBE; numerical simulation tools; optoelectronic devices; resistivities; semi-insulating behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941395
