DocumentCode :
1210800
Title :
Symmetrically linearised charge-sheet model for extended temperature range
Author :
ZHU, Z. Q. ; Gildenblat, Gennady
Author_Institution :
Ira A. Fulton Sch. of Eng., Arizona State Univ., Tempe, AZ
Volume :
45
Issue :
7
fYear :
2009
Firstpage :
346
Lastpage :
348
Abstract :
The symmetrically linearised charge-sheet model, which forms the core of the industry standard compact MOSFET model is extended to a wide temperature range by including partial impurity freeze-out. The new model is verified by comparison with the exact results and includes the original formulation as a special case corresponding to complete impurity ionisation.
Keywords :
MOSFET; impurity ionisation; industry standard compact MOSFET model; symmetrically linearised charge-sheet model;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.3655
Filename :
4807009
Link To Document :
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