Title :
Symmetrically linearised charge-sheet model for extended temperature range
Author :
ZHU, Z. Q. ; Gildenblat, Gennady
Author_Institution :
Ira A. Fulton Sch. of Eng., Arizona State Univ., Tempe, AZ
Abstract :
The symmetrically linearised charge-sheet model, which forms the core of the industry standard compact MOSFET model is extended to a wide temperature range by including partial impurity freeze-out. The new model is verified by comparison with the exact results and includes the original formulation as a special case corresponding to complete impurity ionisation.
Keywords :
MOSFET; impurity ionisation; industry standard compact MOSFET model; symmetrically linearised charge-sheet model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.3655