DocumentCode :
1211269
Title :
A hybrid digital/RF envelope predistortion linearization system for power amplifiers
Author :
Woo, Wangmyong ; Miller, Marvin D. ; Kenney, J. Stevenson
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
53
Issue :
1
fYear :
2005
Firstpage :
229
Lastpage :
237
Abstract :
This paper presents an adaptive wide-band digitally controlled RF envelope predistortion linearization system for power amplifiers (PAs). A field-programmable gate-array-based lookup table is indexed by a digitized envelope power signal, and instantaneously adjusts the input signal amplitude and phase via an RF vector modulator to compensate for the AM-AM and AM-PM distortion. The advantages of this predistortion architecture over conventional baseband digital approaches are that a 20%-33% wider correction bandwidth is achievable at the same clock speeds, and linearization can be performed without the need for a digital baseband input signal. The timing match between the input RF signal and predistorting signal, which is one of the critical factors for performance, was investigated and adjusted to obtain optimum performance. Using three-carrier cdmaOne and wide-band multitone signals, the linearization performances for a 0.5-W GaAs heterostructure field-effect transistor, a 90-W peak-envelope-power (PEP) silicon LDMOS PA, and a 680-W PEP LDMOS PA were examined. In addition, the predistortion performance variation for different signals was studied in terms of signal envelope statistics, output powers, and PA power capacities.
Keywords :
III-V semiconductors; adaptive systems; amplitude modulation; code division multiple access; digital control; elemental semiconductors; field programmable gate arrays; gallium arsenide; linearisation techniques; microwave field effect transistors; microwave power amplifiers; modulators; phase modulation; power MOSFET; silicon; table lookup; 0.5 W; 680 W; 90 W; AM-AM distortion; AM-PM distortion; GaAs; GaAs heterostructure field effect transistor; RF envelope predistortion linearization system; RF vector modulator; Si; adaptive wideband system; digital baseband input signal; digitally controlled system; digitized envelope power signal; field-programmable gate-array-based lookup table; hybrid digital linearization system; input RF signal; output powers; peak envelope power silicon; power amplifiers; power capacity; signal envelope statistics; three-carrier cdmaOne multitone signals; wideband multitone signals; Adaptive control; Baseband; Broadband amplifiers; Digital control; Power amplifiers; Predistortion; Programmable control; RF signals; Radio frequency; Radiofrequency amplifiers;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2004.839306
Filename :
1381693
Link To Document :
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