Title :
Accurate determination of thermal resistance of FETs
Author :
Darwish, Ali M. ; Bayba, Andrew J. ; Hung, Hingloi Alfred
Author_Institution :
Army Res. Lab., Adelphi, MD, USA
Abstract :
The accurate determination of the channel temperature in field-effect transistors (FETs) and monolithic microwave integrated circuits is critical for reliability. An original accurate closed-form expression is presented for the thermal resistance of multifinger FET structures. The model is based on the solution of Laplace´s equations in prolate spheroidal coordinates and elliptical cylinder coordinates. The model´s validity is verified by comparing the results with finite-element simulations, and experimental observations from liquid-crystal measurements and spatially resolved photoluminescence measurements. Very close agreement is observed in all cases.
Keywords :
III-V semiconductors; Laplace equations; MMIC; field effect transistors; gallium arsenide; integrated circuit reliability; photoluminescence; semiconductor device models; semiconductor device reliability; thermal resistance; GaAs; Laplace equations; accurate closed-form expression; channel temperature; elliptical cylinder coordinates; field effect transistors; finite element simulations; liquid crystal measurement; monolithic microwave integrated circuits; multifinger FET structures; reliability; spatially resolved photoluminescence measurements; spheroidal coordinates; thermal resistance; Closed-form solution; Electrical resistance measurement; Integrated circuit reliability; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Monolithic integrated circuits; Temperature; Thermal resistance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2004.839916
