Title :
30 GHz static frequency divider using a 0.2 μm AlGaAs/GaAs/AlGaAs HEMT technology
Author :
Lang, M. ; Berroth, M. ; Rieger-Motzer, M. ; Hülsmann, A. ; Hoffmann, P. ; Kaufel, G. ; Köhler, K. ; Raynor, B.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
11/23/1995 12:00:00 AM
Abstract :
A frequency divider chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.2 μm gate length has been developed and fabricated. The divider can be operated up to 30 GHz with a single-ended input signal at an input resistance of 50 Ω. The output signals are differential with both internal load resistances at 50 Ω
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; aluminium compounds; field effect MMIC; field effect digital integrated circuits; frequency dividers; gallium arsenide; 0.2 micron; 30 GHz; 50 ohm; AlGaAs-GaAs-AlGaAs; HEMT technology; frequency divider chip; quantum well FETs; static frequency divider;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951430
