DocumentCode :
1212050
Title :
A 256×256 compact CMOS image sensor with on-chip motion detection function
Author :
Mizuno, Seiichiro ; Fujita, Kazuki ; Yamamoto, Hiroo ; Mukozaka, Naohisa ; Toyoda, Haruyoshi
Author_Institution :
Solid State Div. & Central Res. Center, Hamamatsu Photonics K.K., Japan
Volume :
38
Issue :
6
fYear :
2003
fDate :
6/1/2003 12:00:00 AM
Firstpage :
1072
Lastpage :
1075
Abstract :
A 256×256 CMOS passive pixel image sensor with especially equipped simple switches, which enables motion detection, is implemented. Each pixel consists of a simple combination of a photodiode and an address switch. Photocharge generated at each pixel is converted to voltage by means of a column charge amplifier array, and motion detection has been realized with utilizing the photodiode as a frame memory. Its output is transformed to a digital value with a 128 array 8-bit analog-to-digital (A/D) converter. Simultaneously, fixed pattern noise is suppressed by utilizing A/D conversion as the CDS circuit. Due to its simple structure, more than 70% fill factor ratio has been realized. The extracted motion detection results can be displayed digitally at 128 frames per second by means of 128 A/D converter arrays.
Keywords :
CMOS image sensors; analogue-digital conversion; image motion analysis; integrated circuit noise; 256 pixel; 65536 pixel; 8 bit; 8-bit A/D converter; CDS circuit; CMOS passive pixel image sensor; address switch; column charge amplifier array; fill factor ratio; fixed pattern noise suppression; on-chip motion detection; photocharge generation; photodiode frame memory; simple switches; Analog-digital conversion; CMOS image sensors; Circuit noise; Image converters; Image sensors; Motion detection; Photodiodes; Pixel; Switches; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2003.811988
Filename :
1202013
Link To Document :
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