Title :
Multi-quantum-well lasers emitting at 1.55 mu m grown by GSMBE
Author :
Perales, A. ; Goldstein, L. ; Fernier, B. ; Starck, C. ; Lievin, J.L. ; Poingt, F. ; Benoit, J.
Author_Institution :
Lab. de Marcoussis, France
Abstract :
GaInAs/GaInAsP multi-quantum-well structures emitting at 1.55 mu m have been realised by gas source molecular beam epitaxy (GSMBE) over a large range of growth temperature. Threshold current densities as low as 0.81 kA/cm2 have been obtained. The first BH lasers fabricated by GSMBE from these heterostructures exhibit low threshold current (18 mA) and linear DC light-current characteristics up to 20 mW.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor junction lasers; semiconductor quantum wells; 1.55 micron; 18 mA; 20 mW; BH lasers; GSMBE; GaInAs-GaInAsP; MQW lasers; buried heterostructure; gas source molecular beam epitaxy; growth temperature; heterostructures; linear DC light-current characteristics; multi-quantum-well structures; semiconductors; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890902
